Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1431078 | Materials Science and Engineering: C | 2008 | 4 Pages |
Abstract
We report on optical gain calculations of a dilute-nitride mid-infrared laser structure designed to be grown on InAs substrate. The active region is composed of several strain-compensated type-II “W”-like InAsN/GaSb/InAsN quantum wells adapted to operate near 3.3 μm at room temperature. For typical injected carrier density σ = 1.1012 cm− 2, the theoretical laser structure performances reveal a gain value at around 1000 cm− 1 at 300 K, inducing a modal gain value equal to 50 cm− 1. Low radiative current densities lower than 100 A/cm2 are predicted, indicating that this dilute-nitride structure could operate at 300 K with small threshold current density.
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Authors
M. Debbichi, A. Ben Fredj, A. Bhouri, M. Saïd, J.-L. Lazzari, Y. Cuminal, A. Joullié, P. Christol,