| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1431091 | Materials Science and Engineering: C | 2008 | 4 Pages |
Abstract
We study the effect of nitrogen content in modulation-doped GaAs/GaAs1 − xNx/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs1 − xNx/GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model.
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Authors
A. Hamdouni, F. Bousbih, S. Ben bouzid, S. Aloulou, J.C. Harmand, R. Chtourou,