Characterization and photovoltaic performance of organic device based on AlPcCl/p-Si heterojunction

•Junction of AlPcCl/p-Si is fabricated using a thermal evaporation technique.•The junction parameters are investigated by using (I–V) and (C–V) measurements.•Estimation series resistance values using Cheung’s and Norde’s methods.•The photovoltaic properties of this junction are investigated.

Analysis of electrical properties Au/AlPcCl/p-Si/Al as p–p+ heterojunction was studied. The dark forward current–voltage characteristics showed a thermionic emission mechanism at low voltage region (V ≤ 0.26 V), while at high voltage region (V ≥ 0.32 V); the operating conduction mechanism was found to be space charge limited current. From (I–V) curves, the junction parameters such as series resistance (Rs), ideality factor (n) and effective barrier height (Φb) were determined at temperatures range (308–378 K). The series resistance and barrier height values of AlPcCl/p-Si heterojunction estimated from Cheung’s and Norde’s methods are strongly temperature dependent especially towards the lower temperatures. The capacitance–voltage (C–V) characteristics of AlPcCl/p-Si devices were also investigated. The built-in potential obtained from the (C–V) measurements was found to be 0.49 eV. Solar cell parameters were evaluated under illumination of 6 mW/cm2 and the power conversion efficiency was estimated as 2.6%.

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