| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1440491 | Synthetic Metals | 2015 | 4 Pages |
•New radical-cation salt.•Novel BEDT-TTF packing motif.•Synthesis, crystal structure and resistivity of new semiconductor.•First use of previously unreported caesium tris(oxalato) germanate.
The synthesis, crystal structure and resistivity of a new semiconducting BEDT-TTF radical-cation salt containing the tris(oxalato)germanate(IV) anion is reported. BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane crystallizes in the space group P21/c, a = 18.322(7), b = 11.919(4), c = 32.746(11) Å, β = 105.797(5)°, V = 6881(4) Å3, T = 295(1) K, Z = 4. Electrical resistivity measurements show that BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane is a semiconductor with an activation energy of 0.224 eV and room temperature resistivity of 212 Ω cm.
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