| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1440657 | Synthetic Metals | 2015 | 5 Pages |
•Green phosphorescent OLED devices with extremely low operating voltage.•Comparison of OLED devices prepared with different charge confinement condition.•Effect of mixing of hole transporting and electron transporting host materials.•OLED devices fabricated with small portion of electron blocking layers.•Operating voltage of 3.1 V with bi-layer structure device.
Relatively simple phosphorescent OLED with extremely low operating voltage (∼3.1 V) was devised. To eliminate some components of OLED device, the biased charge injection design was required. To confine the recombination zone toward the anode side, relatively large hole injection barrier (∼0.7 eV) and small electron injection barrier (<0.2 eV) were applied. To realize extremely low operating voltage, we utilized materials with relatively high mobility. Two different emitting layers containing hole transporting material (TAPC) mixed with two different electron transporting materials (TpPyPB and TmPyPB) showed slightly different device behavior. Two layer device with the highest efficiency was obtainable from the biased injection design (TAPC:TpPyPB system), while the biased injection was inefficient in case of TAPC:TmPyPB system.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide
