The electrical characteristics of thin film transistors with graphene oxide and organic insulators

•Nanographene oxide powders were fabricated by Hummers method.•We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor.•The n-GO based organic thin film transistor was found to exhibit a high mobility of 0.375 cm2/V.s.

We have studied the electrical characteristics of nanographene oxide (n-GO) thin film transistor and n-GO organic thin film transistors with poly(methyl methacrylate) (PMMA) and poly-4-vinylphenol (PVP) as organic insulators. One of the alternate methods to prepare GO is achieved by oxidizing graphite via modified Hummers method. In this study, the GO was synthesized by a modified Hummers method. The graphene oxide thin films with PMMA and PVP were prepared by spin coating the precursor solution on a GO/SiO2 dielectrics bilayer. The graphene oxide thin film transistor was found to exhibit a high mobility of 0.375 cm2/V.s. This indicates that n-GO film has a more important effect to fabricate a high mobility n-GO thin film transistor than n-GO based thin film transistor with PMMA and PVP.

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