| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1440974 | Synthetic Metals | 2014 | 4 Pages |
•The blend organic semiconductor-p-Si diodes were fabricated using spin coating method.•The rectifying properties of the diodes were studied for various molar ratios of blends.•The best rectifying behavior exhibiting diode was obtained for TIPS:RHD molar ratio of 1:3.
The blend organic semiconductor-p-type silicon diodes with various molar ratios of 6,13-bis(triisopropylsilylethynyle) (TIPS) pentacene:rhodamine were fabricated using spin coating method. The rectifying properties of the diodes were studied depending on the molar ratios of TIPS:RHD blends. The prepared diodes for the various blend concentrations indicate a rectification behavior with ideality factor between 2.3 and 7.3 values and barrier height between 0.42 eV and 0.79 eV values. The interface properties of the diodes were investigated by C–G–V characteristics at various frequencies. The best diode as an optimum one was obtained as TIPS:RHD molar ratio of 1:3 for its good electrical rectification.
