Insulator surface modification of field-effect transistor using isolated poly(3-hexylthiophene) nanofiber

•Insulator surface modification of FET using P3HT nanofibers was investigated.•The FET of nanofiber mat on fluoro-modified surface was in a normally-on state.•The mobility was larger than that on other modified surface.•The mobility of isolated nanofibers on fluoro-modified surface was much larger.

The surface modification of insulators and electrodes of field-effect transistor (FET) devices using a poly(3-hexylthiophene) (P3HT) nanofiber was investigated. The mobility of the P3HT nanofiber using an insulator surface modified by perfluorodecyltrimethoxysilane (FAS) was much larger than that modified by other reagents, i.e. octadecyltrimethylsilane (OTS) and 3-aminopropyltrimethoxysilane (APS). In addition, the threshold increased with the use of FAS and was in a normally-on state. In particular, an FET of isolated nanofibers upon insulator surface modification by FAS showed a high mobility of 6.8 × 10−1 cm2 V−1 s−1.

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