Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1441583 | Synthetic Metals | 2010 | 4 Pages |
Abstract
Matrix assisted pulsed laser evaporation (MAPLE) allows homogeneous film coverage of organic materials for layer-by-layer growth providing a tighter control of the polymer-dielectric interface in field-effect transistors (FETs) and metal-insulator-semiconductor (MIS) diodes. Electrical characteristics of FETs and MIS diodes using MAPLE and spin-coated grown fluorene copolymer films are compared. Current-voltage characteristics of MAPLE grown FETs without any surface modification show a better performance compared to the spin-coated FETs. Capacitance-voltage and conductance-voltage investigations of the MIS structures show that loss as well as accumulation capacitance and time constant dispersions are less in the MAPLE grown film compared to the spin-coated film.
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Authors
D. Adil, N.B. Ukah, R.K. Gupta, K. Ghosh, S. Guha,