| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1441831 | Synthetic Metals | 2012 | 4 Pages |
Two different types of hole transport layers are applied to the standard top-emitting green organic light emitting diodes (OLEDs) with relatively thick microcavity structure for a low voltage operation. An 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN), a well-known electron accepting material, was utilized as an interlayer which induces an interfacial charge transfer. The position of an interlayer was determined by investigation of device characteristics of four different types of hole only devices. The optimized device with very thin HAT-CN layer (∼5 nm) sandwiched between N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4′-diamine (DNTPD) layers showed very stable current efficiency and power efficiency behavior with low roll-off characteristic. The performances of the device with interlayer were compared to those of p-doped device (3%). Very interestingly, the device with HAT-CN interlayer showed very similar operating voltage behavior as well as current/power efficiency behavior compared to that prepared with p-doped hole transport layer (HTL).
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The method to decrease operating voltage of OLED devices by using HAT-CN molecules. ► Comparison of OLED devices with HAT-CN interlayer inside HTL and HAT-CN doped HTL. ► Effect of operating voltage by HAT-CN doping ratio. ► Thick top-emitting OLED devices with very low efficiency roll-off behavior.
