Article ID Journal Published Year Pages File Type
1441916 Synthetic Metals 2012 7 Pages PDF
Abstract

A series of hole-transporting molecules based on spiro(fluorene-9,9′-xanthene) were designed and synthesized by a copper-catalyzed modified Ullmann reaction. These compounds have very high-lying HOMO levels (∼5.0 eV), which are beneficial for the hole-injection from ITO anode. The double-layer EL devices using DPA-SFXMe and DPA-SFXBu as hole-transporting layers exhibit lower turn-on voltage and higher efficiency compared with those of a typical NPB-based device. The DPA-SFXBu-based device exhibits high maximum luminescence of 21,712 cd/m2, and its power efficiency can reach a value of 2.31 lm/W, which is nearly 90% higher than that of a similar NPB-based device.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We have synthesized a series of hole-transporting materials based on spiro(fluorene-9,9′-xanthene). ► These compounds have very high-lying HOMO levels (∼5.0 eV). ► The EL device based on DPA-SFXBu exhibits the maximum power efficiency of 2.31 lm/W.

Related Topics
Physical Sciences and Engineering Materials Science Biomaterials
Authors
, , , , , , , , ,