| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1442175 | Synthetic Metals | 2012 | 5 Pages |
Abstract
⺠Contact resistance is due to the charge carrier injection at the metal/OSC interface. ⺠We report a model of overall device resistance, as a function of the gate bias VG. ⺠We have reproduced very well the output characteristic.
Keywords
Related Topics
Physical Sciences and Engineering
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Biomaterials
Authors
S. Mansouri, S. Zorai, R. Bourguiga,