Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1442332 | Synthetic Metals | 2010 | 5 Pages |
Abstract
The electrical and interface state density properties of the Au/1,1â² dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/Ï-f plots and was of order of 5.61Â ÃÂ 1012Â eVâ1Â cmâ2. It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1â² dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters.
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Authors
M. Enver Aydin, Fahrettin Yakuphanoglu, GülÅen Ãztürk,