Article ID Journal Published Year Pages File Type
1442332 Synthetic Metals 2010 5 Pages PDF
Abstract
The electrical and interface state density properties of the Au/1,1′ dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/ω-f plots and was of order of 5.61 × 1012 eV−1 cm−2. It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1′ dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters.
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Physical Sciences and Engineering Materials Science Biomaterials
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