Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1442458 | Synthetic Metals | 2009 | 5 Pages |
Abstract
We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives (N1, N2, and N3) with various numbers of electron-withdrawing CF3 groups. The device using N3, which contains aromatic NTCDI, was found to exhibit an electron mobility (μe) of 0.15 (±0.04) cm2/V s (the maximum μe observed was 0.24 cm2/V s) and an Ion/Ioff (at Vd = 80 V) of approximately 2 × 105. Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1.
Related Topics
Physical Sciences and Engineering
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Authors
Yunoh Jung, Kang-Jun Baeg, Dong-Yu Kim, Takao Someya, Soo Young Park,