| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1442497 | Synthetic Metals | 2010 | 5 Pages |
Abstract
The characteristics of the p–n junction between vertically aligned ZnO nanorods and polyaniline (PANI) thin film were investigated. The rectifying behavior of the I–V curve of ZnO/PANI diode was verified with assembled ZnO/PANI structures. The cut-in voltage of the p–n junction was found to be around 0.5 V and the reverse breakdown voltage was about −27 V. In addition, the effects of UV illumination and NH3 exposure on the I–V characteristics of ZnO/PANI configuration were also investigated.
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Related Topics
Physical Sciences and Engineering
Materials Science
Biomaterials
Authors
Yinhua Li, Jian Gong, Mallarie McCune, Gaohong He, Yulin Deng,