| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1442660 | Synthetic Metals | 2009 | 4 Pages |
Abstract
Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl groups of the interface and irreversible after long time in vacuum except for quartz. For a given interface, dip-coated film always has a higher doping level and slower de-doping than spin-coated films because of higher porosity. With careful control of the oxygen level transistor with mobility of 0.12 cm2/V s and on–off ratio of 29,000 are obtained for dip-coated film on glass substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Biomaterials
Authors
Chien-Cheng Liu, Chia-Ming Yang, Wen-Hsing Liu, Hua-Hsien Liao, Sheng-Fu Horng, Hsin-Fei Meng,