| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1442948 | Synthetic Metals | 2007 | 4 Pages |
An inorganic–organic photovoltaic device with a structure of [6,6]-phenyl C61-butyric acid methyl ester and p-Si has been fabricated. The ideality factor value of the diode was found to be 2.12. This n value of the diode implies a deviation from ideal junction behavior. The p-Si/PCBM diode shows a photovoltaic behaviour with a maximum open circuit voltage Voc of 0.12 V, and short-circuit current Isc of 0.10 μA under 6 mW/cm2 light illumination. The parasitic resistances for the diode, which are series RS and shunt Rsh resistances were calculated to be 5.24 × 104 Ω and 1.95 × 107 Ω, respectively. The capacitance–voltage plot indicates a non-linear behavior, suggesting a non-uniform dopant density profile and interface irregularities of p-Si/PCBM device. The barrier height ϕb value for the diode was found to be 0.79 eV. It is evaluated that the p-Si/PCBM diode is a photodiode with calculated electronic parameters.
