Modeling electrical characteristics of thin-film field-effect transistors

The thin-film field-effect-transistor model recently developed is applied to devices based on materials that already show current even without a bias present at the gate resulting in so-called normally-on transistors. These fall in three categories: (i) narrow-band-gap semiconductors, where the thermal energy is sufficient to excite carriers across the band-gap, here analyzed for unipolar and ambipolar materials, (ii) doped semiconductors, and (iii) metals. It is shown what the impact is on the IV and transfer curves.