New organic semiconductors for thin-film transistors: Synthesis, characterization, and performance of 4H-indeno[1,2-b]thiophene derivatives

Three new hybrid polycyclic aromatic 4H-indeno[1,2-b]thiophene derivatives (DIT-nT) were readily synthesized and characterized. Ultraviolet photoelectron spectroscopy (UPS) and inverse photoemission spectroscopy (IPES) study shows that the gap energies of these oligothiophene derivatives are dependent on the effective π-conjugation length of the molecules, with decreasing gap energies while the conjugated length is increased. More importantly, the hole injection barrier obtained from UPS and IPES studies decreases significantly at the metal-organic interface as the effective π-conjugation length of the molecules increases. Hence, the hole injection into DIT-2T is expected to be more facile than that into DIT-0T due to the smaller barrier. X-ray diffraction examination revealed that thin films are highly ordered, with the long axes of the molecules nearly perpendicular to the surface. The field-effect transistor (FET) devices based on the three oligomers show good p-type performance with high hole mobilities, and the highest value (0.014 cm2 V−1 s−1) was obtained for the longest oligomer DIT-2T.

Graphical abstractUPS and IPES study and FET performance show that the new hybrid polycyclic aromatic 4H-indeno[1,2-b]thiophene derivatives (DIT-nT) are good p-type materials. With increasing the π-conjugation length, the hole injection into DIT-2T is more facile than that into DIT-0T, and the highest FET value was obtained for the longest oligomer DIT-2T.Figure optionsDownload full-size imageDownload as PowerPoint slide