Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1443504 | Synthetic Metals | 2007 | 5 Pages |
Abstract
For over 40 years the current-voltage (J-V) characteristics of an organic diode with exponentially distributed traps have been interpreted using the equation J â Vm, where m > 2. This equation is based on the classical work of Helfrich and Mark (W. Helfrich, P. Mark, Z. Phys. 168 (1962) 495). It is based on the assumption that the injection barrier is zero. However, the recent results show that in many cases the Schottky barrier is not zero and modification in this equation is necessary. We present a mathematical simulation, taking into account the effect of non-zero Schottky barrier. The experiments show good agreement with the simulated results.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Biomaterials
Authors
Pankaj Kumar, S.C. Jain, Vikram Kumar, Aparna Misra, Suresh Chand, M.N. Kamalasanan,