Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes

The synthesis, single-crystal structures, and device performance of novel naphthalene-diimide are described. The crystal structure has revealed the importance of a withdrawing group on solid-state packing. Metal molybdenum use as source/drain (S/D) electrodes can improve the performance of the bottom-contact device. The bottom-contact device based on a material of N,N′-bis (4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide has a high mobility of 3.58 × 10−2 cm2 V−1 s−1, a threshold voltage of 1.3 V, and an on/off current ratio of 5.2 × 105.