Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1443956 | Synthetic Metals | 2006 | 6 Pages |
Abstract
Highly efficient DCJTB-doped device was realized by enhanced electron injection and exciton confinement. A fluorine end-capped linear phenylene/oxadiazole oligomer 2,5-bis(4-fluorobiphenyl-4â²-yl)-1,3,4-oxadiazole (1) and a trifluoromethyl end-capped oligomer 2,5-bis(4-trifluoromethylbiphenyl-4â²-yl)-1,3,4-oxadiazole (2) were designed and incorporated as an electron transporting/hole blocking material in the device structure ITO/NPB (60Â nm)/DCJTB:Alq3 (0.5%, 10Â nm)/1 or 2 (20Â nm)/Alq3 (30Â nm)/LiF (1Â nm)/Al (100Â nm). The devices showed highly efficient red luminescence. In particular, the device based on 1 achieved pure red luminescence at 620Â nm originating from DCJTB, with a narrow FWHI of 65Â nm, maximal brightness of 13,300Â cd/m2 at voltage of 20.8Â V and current density of ca. 355Â mA/cm2. High current and power efficiencies (>3.6Â cd/A, 1.0Â lm/W) were retained within a wide range of current densities. Our results show efficient and stable DCJTB-doped red electroluminescence could be anticipated for practical applications by taking advantage of the present approaches. The control experiments using BCP were also studied.
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Authors
Ping Zhao, Xuhui Zhu, Jiangshan Chen, Dongge Ma, Wei Huang,