Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1446192 | Acta Materialia | 2013 | 6 Pages |
Abstract
Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Congxin Xia, Yuting Peng, Shuyi Wei, Yu Jia,