| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1446311 | Acta Materialia | 2013 | 8 Pages |
It has been demonstrated that InSb nanoinclusions, which are formed in situ, can simultaneously improve all three individual thermoelectric properties of the n-type half-Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb (Xie WJ, He J, Zhu S, Su XL, Wang SY, Holgate T, et al. Acta Mater 2010;58:4795). In the present work, the same approach is adopted to the p-type half-Heusler compound Ti(Co,Fe)Sb. The results of resistivity, Seebeck coefficient, thermal conductivity and Hall coefficient measurements indicate that the combined high-mobility electron injection, low energy electron filtering and boundary scattering, again, lead to a simultaneous improvement in all three individual thermoelectric properties: enhanced Seebeck coefficient and electrical conductivity as well as reduced lattice thermal conductivity. A figure of merit of ZT ≈ 0.33 was attained at 900 K for the sample containing 1.0 at.% InSb nanoinclusions, a ∼450% improvement over the nanoinclusion-free sample. This represents a rare case that the same nanostructuring approach works successfully for both p-type and n-type thermoelectric materials of the same class, hence pointing to a promising materials design route for higher-performance half-Heusler materials in the future and hopefully will realize similar improvement in thermoelectric devices based on such half-Heusler alloys.
Graphical abstractIn situ formed InSb nanoinclusions in p-type Ti(Co,Fe)Sb half-Heusler compound can induce combined high mobility electron injection, low energy electron filtering, and boundary scattering effects, and lead to a simultaneous improvement of all three individual thermoelectric properties of Ti(Co,Fe)Sb–InSb nanocomposites: enhanced Seebeck coefficient and electrical conductivity as well as reduced lattice thermal conductivity.Figure optionsDownload full-size imageDownload high-quality image (80 K)Download as PowerPoint slide
