Interface control: A modified rooting technique for enhancing field emission from multiwall carbon nanotube based bulk emitters

The unique properties of carbon nanotubes (CNTs) have raised hopes that these materials might find wide application as cold cathodes in various electron sources. The excellent field emission properties shown by CNT-based field emitters has further stimulated this expectation. However, efficient performance of a practical field emitter, which comprises a large number of randomly or regularly oriented CNTs, is restricted primarily due to poor junctions formed between CNTs and substrates. This study is aimed at enhancing the junction performance by way of a modified “rooting” technique—interface control. In this process, the interface between CNTs and substrate has been tailored with different metals in an attempt to improve the CNT–substrate junction performance. Multiwall carbon nanotubes (MWCNTs) were synthesized on different interface-controlled substrates, i.e. Cu, Al, W, Si and low-temperature co-fired ceramic. All the samples produced mat-type, randomly oriented MWCNT structures. Among the four different substrates studied, MWCNT-based field emitters on Cu substrate demonstrated the best field emission response, in terms of low turn-on field, high emission current, good field enhancement factor and excellent stability in long-term operation. Emitter structures and their field emission behavior were correlated and it was shown that interface control, as an advanced “rooting” process, plays an important role in determining the emission response from a bulk field emitter.