| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1448609 | Acta Materialia | 2009 | 9 Pages |
Abstract
The behavior of Mn when doped into ZnO by ion implantation was investigated by scanning transmission electron microscopy, electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. Unlike the previously reported case of Co/Ni-implanted ZnO (where Co/Ni nanocrystals were observed), Mn implantation has been found to induce an O deficiency in ZnO, which results in the formation of hexagonal Zn nanocrystals when the implantation dose is sufficient. Further annealing of the high-dose Mn-implanted ZnO promotes the formation of ZnMn2O4 compounds near the surface and a porous structure within the implanted region. The fundamental reasons behind these physical phenomena are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Y. Wang, J. Zou, Y.J. Li, B. Zhang, W. Lu,