| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1449900 | Acta Materialia | 2007 | 5 Pages |
Abstract
Raman scattering has been used to study lattice defects induced by non-stoichiometry in indium nitride films grown by plasma-assisted molecular beam epitaxy with different In/N ratios. A gap mode located at about 375 cm−1 is observed in InN films grown at low In/N ratios. This is in good agreement with the recursion method calculation for the In vacancy-induced vibration mode. In addition, a spatial correlation model has been used to estimate the lattice disorder in InN samples. The shortest correlation length is L = 5.9 nm.
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
J.B. Wang, Z.F. Li, P.P. Chen, Wei Lu, T. Yao,