Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1449969 | Acta Materialia | 2007 | 10 Pages |
Abstract
Microstructure and interfacial phase formation of CdCr2Se4 thin films deposited by molecular beam epitaxy on GaAs, Al0.1Ga0.9As and ZnSe/Al0.1Ga0.9As have been investigated with high-resolution transmission electron microscopy, fine-probe energy-dispersive spectroscopy and Z-contrast imaging. For CdCr2Se4 grown epitaxially on GaAs and/or Al0.1Ga0.9As, Cr tends to segregate to the interface forming either a layer enriched with Cr or trapezoidal-shaped Cr-rich precipitates. On ZnSe, CdCr2Se4 grows epitaxially at temperatures >300 °C, but when grown at 350 °C, the interface is quite rough or wavy. When the CdCr2Se4 is grown at 300 °C, the CdCr2Se4/ZnSe interface is more planar, but the CdCr2Se4 film is only epitaxial up to a thickness of about 5 nm, and then becomes polycrystalline as the thickness of the film increases. An interfacial phase, CdxZn1âxSe, forms at the CdCr2Se4/ZnSe interface, the thickness of which is determined by specific growth conditions.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
R. Goswami, G. Kioseoglou, A.T. Hanbicki, B.T. Jonker, G. Spanos,