| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1451275 | Acta Materialia | 2005 | 9 Pages |
The various types of facet Si dendrites observed on splat-quenched surfaces were analyzed in order to understand why the growth direction and morphology of the facet Si dendrites change with increasing undercooling. The growth directions of typical facet dendrites were determined to be 〈2 1 1〉, 〈1 1 0〉 and 〈1 0 0〉 using an electron backscatter pattern apparatus. It was found that both the 〈2 1 1〉 and 〈1 1 0〉 dendrites with twins were bounded by atomically smooth {1 1 1} planes. Therefore, their growth is governed by the incorporation of atoms at re-entrant corners formed by twins. The 〈1 0 0〉 dendrites with fourfold symmetry have no twins and are commonly observed at high undercoolings. Moreover, two kinds of 〈1 0 0〉 dendrites with different secondary arm directions 〈1 0 0〉 and 〈1 1 0〉 were clarified for the first time. The dendrite tip shape and facet planes, as determined using an atomic force microscope, suggest that the 〈1 0 0〉 dendrites are bounded by atomically rough {1 1 0} and {1 0 0} planes. That is, facet Si dendrites vary in their growth direction and morphology with increasing undercooling because the dendrites select atomically rough interfaces in order to promote the incorporation of atoms at high undercoolings.
