Dielectric relaxation behavior and energy storage properties of Sn modified SrTiO3 based ceramics

SrSnxTi(1−x)O3 (x=0, 0.01, 0.03, 0.05, 0.07) dielectric ceramics were fabricated by the solid state reaction method. Significant refinement of grain size and improved resistivity were observed with the addition of Sn, accounting for effectively enhanced dielectric breakdown strength, beneficial for the energy storage applications. Impedance analysis was employed to calculate the conductivities of grain and grain boundary and resistance ratios (Rgb/Rg) of grain boundary to grain. The grain boundary effect was believed to dominate the modified macroscopic performance, which was confirmed by the complex impedance analysis. The optimal properties were achieved for samples with x=0.05, exhibiting a charge energy density of 1.1 J/cm3 and an energy efficiency of 87%.