| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1458880 | Ceramics International | 2016 | 5 Pages |
The effects of annealing temperature on the structure, morphology, ferroelectric and dielectric properties of Na0.5Bi0.5Ti0.99W0.01O3+δ (NBTW) thin films are reported in detail. The films are deposited on indium tin oxide/glass substrates by a sol-gel method and the annealing temperature adopted is in the range of 560–620 °C. All the films can be well crystallized into phase-pure perovskite structures and show smooth surfaces without any cracks. Particularly, the NBTW thin film annealed at 600 °C exhibits a relatively large remanent polarization (Pr) of 20 μC/cm2 measured at 750 kV/cm. Additionally, it shows a high dielectric constant of 608 and a low dielectric loss of 0.094 as well as a large dielectric tunability of 62%, making NBTW thin film ideal in the room-temperature tunable device applications.
