Reduced leakage current and large polarization of Na0.5Bi0.5Ti0.98Mn0.02O3 thin film annealed at low temperature

Na0.5Bi0.5Ti0.98Mn0.02O3 (NBTMn) thin films were fabricated on indium tin oxide/glass substrates via chemical solution deposition and annealed at various temperatures from 450 to 600 °C and the influence of annealing temperature on their crystallization and electrical properties was investigated. X-ray diffraction measurement reveals that the film can be crystallized at an annealing temperature as low as 500 °C. The leakage current shows a decreasing tendency with a low and stable leakage current density of 10–7 A/cm2 as the annealing temperature increases to 550 °C. However, the electrical properties degrade at 600 °C, which may be due to the recrystallization effect together with ions volatilization. The NBTMn thin film annealed at 550 °C exhibits the higher ferroelectricity with a large remanent polarization (Pr) of 38 μC/cm2, which is nearly to the value of NBT ceramics.