| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 1460332 | Ceramics International | 2015 | 5 Pages | 
Abstract
												In the present study, porous silicon carbide (SiC) was prepared by mixing coarse SiC particles with a small amount of sodium silicate. The firing was then carried out at 1000 °C in air for 10 min. Though the resulting porosity is as high as 40%, the thermal conductivity of the porous SiC reached 19 W/m K, with the flexural strength reaching 20 MPa. The sodium silicate formed a strong bond between SiC particles; the thermal resistance of the thin bonding layer was low.
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											Authors
												Che-Yuan Liu, Wei-Hsing Tuan, Shih-Chieh Chen, 
											