Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition

β-SiC films were prepared by laser chemical vapour deposition using a Nd:YAG laser in a H2 or Ar atmosphere. The effects of the deposition atmosphere on the film phase composition and microstructure were investigated. In a H2 atmosphere, (111)-oriented β-SiC films consisting of submicron-sized grains were grown at 1273–1473 K, while carbon was codeposited with the β-SiC films grown at 1573–1673 K. In an Ar atmosphere, amorphous Si–C–O films were grown at 1073–1373 K, while (111)-oriented β-SiC films that did not contain free carbon were grown at 1473–1723 K. The deposition rates of the (111)-oriented β-SiC films were 1500–2000 μm h−1.