| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1460771 | Ceramics International | 2015 | 5 Pages |
Abstract
The Bi1.5Mg0.5Nb0.5Ti1.5O7 (BMNT) thin films with cubic pyrochlore structure were prepared on Pt/TiOx/SiO2/Si substrates by rf magnetron sputtering. The effects of deposition pressure on the structure and dielectric properties of BMNT thin films were investigated. As the deposition pressure decreases, the crystallinity becomes better, and the dielectric properties and tunability have an obvious improvement. The BMNT thin film deposited at 1 Pa exhibited a dielectric constant of 107.86, a tunability of 30.0% at 1 MV/cm, low tangent loss of 0.0017, and the largest FOM of 176.47. The excellent dielectric properties make BMNT thin films promising for potential tunable capacitor applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Dan Xu, Lingxia Li, Ning Zhang, Shihui Yu, Helei Dong, Yuxin Jin,