Structural, electrical and ferroelectric properties of acceptor-doped Na0.5Bi4.5Ti4O15 thin films prepared by a chemical solution deposition method

The effects of acceptor ion doping on the structural, electrical and ferroelectric properties of a Na0.5Bi4.5Ti4O15 thin film were investigated. Pure Na0.5Bi4.5Ti4O15 (NaBTi) and acceptor-doped Na0.5Bi4.5Ti3.97M0.03O15−δ (M=Cr3+ and Fe3+ (NaBTCr and NaBTFe)) thin films were prepared by using chemical solution deposition. X-ray diffraction and Raman spectroscopy studies revealed the formation of orthorhombic structures for all the thin films without any detectable secondary phases. The NaBTCr and NaBTFe thin films exhibited improved electrical and ferroelectric properties compared to the NaBTi thin film, which could be explained by micro-structural changes and the formation of a defect complex that minimizes the interactions between the chemical defects and domain walls.