Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1460869 | Ceramics International | 2015 | 5 Pages |
Abstract
Transparent conducting Al-doped ZnO films were deposited by atomic layer deposition with various of Al doping concentrations. In order to explain the change in resistivity of Al-doped ZnO films depending on Al doping concentration, we investigated the correlations between the conducting property and electronic structure in terms of atomic configuration, the evolution of the conduction band and band gap, and band alignments (conduction band offset between minimum of conduction band and Fermi level, ΔECB). ZnO film Al-doped at ~3 at% and deposited at 250 °C showed the lowest resistivity, which resulted in changes in the conduction band of insulating Al2O3 film, and increases in the band gap and conduction band offset (ΔECB).
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Hyun-Woo Park, Kwun-Bum Chung, Jin-Seong Park, Seungmuk Ji, Kyungjun Song, Hyuneui Lim, Moon-Hyung Jang,