Structural and electrical properties of 0.1BiYbO3–0.9PbTiO3 piezoelectric thin films grown by pulsed laser deposition

High Curie temperature piezoelectric materials have experienced huge development and widespread application in recent decades, especially for the application of novel perovskite xBiMeO3–(1−x) PbTiO3 solid–solutions family. Nowadays, with the fast increasing applications for integrated ferroelectrics, the high Curie temperature piezoelectric thin films have drawn considerable attention. In this paper we present the works on the preparation and electrical properties of 0.1BiYbO3–0.9PbTiO3 thin films on Pt/TiO2/SiO2/Si (100) substrates by using pulsed laser deposition at 600 °C with different oxygen atmosphere pressure. The final samples were post-annealed at 700 °C for 10 min in a rapid thermal annealing (RTA) furnace. The phase structure and surface morphologies of the 0.1BiYbO3–0.9PbTiO3 thin films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The frequency dependent dielectric properties were measured by an Agilent4980A LCR meter. Finally, the piezoelectric properties of the films were tested by using piezoelectric force microscopy (PFM).