Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1460935 | Ceramics International | 2015 | 6 Pages |
(Bi1.5Zn0.1Ca0.4)(Zn0.5Nb1.5)O7 (BZNCa) thin films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates at room temperature. The as-deposited films and films post-annealed from 100 °C to 175 °C for 10 min in air are all amorphous. The influence of the post-annealing process on structural and electrical properties was investigated. The surface morphology of BZNCa films remains almost same with the annealing temperature. While the dielectric and leakage-current properties of the films are strongly influenced by the annealing temperature. The film deposited at O2 pressure of 4 Pa and then post-annealed at 150 °C shows the improved dielectric and leakage-current characteristics. The dielectric constant and loss tangent are 67.2 and 0.03 at 100 kHz, respectively. The leakage current density is less than 1 µA/cm2 at an applied bias electric field of 400 kV/cm. The results indicate that calcium doped BZN thin films have potential applications for embedded capacitors.