| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1461441 | Ceramics International | 2014 | 4 Pages |
Abstract
Epitaxial indium oxide (In2O3) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In2O3 film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In2O3 (110)|MgO (110) with In2O3 [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In2O3 films is about 3.55–3.70 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Zhao Li, Cansong Zhao, Wei Mi, Caina Luan, Xianjin Feng, Jin Ma,