Article ID Journal Published Year Pages File Type
1461688 Ceramics International 2013 5 Pages PDF
Abstract

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. The ratio of nitrogen (N2) to Argon (Ar) used to prepare the films was 80:20. The films were deposited at different RF powers of 150 W, 175 W, 200 W, 225 W and 250 W for ZnO target and 200 W for AlN target. XRD results revealed the existence of (002) ZnO phase for RF power of ZnO target above 175 W. However, at the RF power of 150 W, the film exhibited amorphous properties. The prepared films showed transmission values above 70% in the visible range. The average calculated value of energy band gap and the refractive index were 3.43 eV and 2.29 respectively. The green and UV emission peaks were observed from PL spectra. Raman Peaks at 275.49 cm−1 and 580.17 cm−1 corresponding to ZnO:N and ZnO:AlN were also observed.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Authors
, ,