Article ID Journal Published Year Pages File Type
1461859 Ceramics International 2014 6 Pages PDF
Abstract

Highly c-axis-oriented ZnO thin films incorporated with various numbers of Ag nanoisland layers were fabricated in this study by alternating sputtering-deposited ZnO and Ag layers on Si substrates. Two such ZnO–Ag layered structures were fabricated: the first by using a 150-nm ZnO film–Ag island layer/Si, and the second by using three applications of a 50-nm ZnO film–Ag island layer/Si. The crystallographic features of the as-deposited ZnO thin film on the Si substrate exhibited a pure c-axis orientation. However, the degree of the c-axis texture of the ZnO thin films slightly decreased after inserting Ag island layers. The ZnO thin-film surface became quite rough because the surface morphology was transformed from being dense and flat to exhibit a loosely columnar grain structure. Transmittance electron microscopy (TEM) images showed that the Ag islands were clearly distributed on the ZnO/substrate and ZnO/ZnO interfaces. The photoluminescence measurement results indicated that the near-band-edge (NBE) emission peak intensity was enhanced by nearly two orders of magnitude in the 150-nm ZnO film–Ag island layer/Si compared with that of the as-deposited 150-nm ZnO thin film without an inserted Ag island layer. Inserting additional Ag island layers did not increase the NBE emission intensity; instead, the visible emission band intensity was markedly increased. This was attributed to the substantial change in the ZnO thin film microstructure caused by inserting the Ag island layers.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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