| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1462036 | Ceramics International | 2012 | 4 Pages |
Abstract
The dielectric properties of composition spread SiO2–Al2O3 thin films deposited by off-axis radio-frequency magnetron sputtering at room temperature were explored to obtain optimized compositions, which have low dielectric constants and losses. The specific points (compositions) showing superior dielectric properties of low dielectric constants (8.13 and 9.12) and losses (tanδ ∼0.02) at 1 MHz were found in area of the distance of 25.0 mm (Al2Si3O8) and 42 mm (Al2.4Si3O8) apart from SiO2 target side in 75 mm × 25 mm sized Pt/Ti/SiO2/Si(1 0 0) substrates, respectively. The specific thin films were amorphous phase and the compositions were Al2Si3O8 (k ∼8.13) and Al2.4Si3O8 (k ∼9.12).
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yun Hoe Kim, Dong Wook Shin, Jin Sang Kim, Jong-Han Song, Seok-Jin Yoon, Kyung Bong Park, Ji-Won Choi,