| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1462146 | Ceramics International | 2013 | 4 Pages |
Abstract
Crack-free Sm-doped Bi2Ti2O7 (Sm:BTO) thin films with strong (111) orientation have been prepared on Pt (111) substrates using a chemical solution deposition (CSD) method. The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The insulating and dielectric properties were also evaluated at room temperature. The results demonstrate that the Sm:BTO films exhibit improved electrical performances as compared to the pure Bi2Ti2O7 thin films and suggest a strong potential for utilization in microelectronics devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
H.T. Sui, D.M. Yang, H. Jiang, Y.L. Ding, C.H. Yang,