| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1463218 | Ceramics International | 2011 | 6 Pages |
Abstract
In this study, we investigated the effects of forming gas (7% H2 + 93% Ar) annealing (FGA) and recovery annealing (RA) in ambient oxygen on the structure and electrical properties of BiFeO3 (BFO) thin films. X-ray diffraction results indicate that BFO remains in the perovskite phase following FGA. However, the spatial distribution of current maps obtained by conductive atomic force microscopy shows that FGA-treated BFO thin films are less electrically insulating than those without prepared thermal annealing. Recovery annealing improves the structural and chemical homogeneity of the FGA-treated films, thereby increasing the electrical resistance of the films.
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Authors
Yuan-Chang Liang, W.S. Chen, Chia-Yen Hu, Chiem-Lum Huang, W. Kai,