| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1463871 | Ceramics International | 2008 | 5 Pages |
Abstract
Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
K. Uchiyama, T. Shiosaki, T. Kosaka, A. Kasamatsu, M. Echizen,