Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1463879 | Ceramics International | 2008 | 4 Pages |
Abstract
In this work, dopants and buffer layers were employed to simultaneously lower the dielectric loss and enhance the dielectric tunability of Ba(Zr0.3Ti0.7)O3 (BZT) thin films. The BZT, 1 mol% La doping BZT (BZTL) with and without La0.5Sr0.5CoO3 (LSCO) buffer layers were prepared by sol–gel technique. The dielectric properties of the thin films were investigated as a function of frequency and current bias field. As a result, the BZTL thin film with LSCO buffer layer showed lower dielectric loss and higher tunability simultaneously, which can be a promising candidate for tunable microwave device applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Lina Gao, Jiwei Zhai, Xi Yao,