| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1463880 | Ceramics International | 2008 | 4 Pages |
Abstract
Graded Pb(Zrx,Ti1−x)O3 films with Zr compositions varied across the thickness direction were deposited on Pt/Ti/SiO2/Si substrate using a conventional spin-coating method. The up- and down-graded PZT films exhibited the perovskite polycrystalline structure. Microstructure investigations of the films showed a dense texture and successive layers of different compositions. The relative permittivities of the up- and down-graded PZT films measured at 1 kHz and room temperature were 1846 and 1019, respectively. Good dielectric and ferroelectric properties as well as the low-temperature processing suggested that the compositionally graded PZT films were promising for memory device applications.
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Physical Sciences and Engineering
Materials Science
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Authors
P. Khaenamkaew, I.D. Bdikin, A.L. Kholkin, S. Muensit,