Article ID Journal Published Year Pages File Type
1463885 Ceramics International 2008 4 Pages PDF
Abstract

Yttria-stabilized zirconia (YSZ) was epitaxially grown on both Si(0 0 1) and Si(1 1 1) substrates using a RF magnetron sputtering method. While YSZ(0 0 1) was grown on Si(0 0 1) with a cubic on cubic relation, YSZ(1 1 1) film on Si(1 1 1) with six-fold symmetry on surface showed two variants; cubic on cubic (type A) and 180° rotation about surface normal along [1 1 1] (type B). X-ray diffraction method confirmed single domain YSZ with type B structure when samples were prepared with the relatively slow deposition rate and low substrate temperature. Interestingly, in a reverse pairing of substrate and film, Si deposited on YSZ(1 1 1) substrates showed single domain with type A structure.

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Physical Sciences and Engineering Materials Science Ceramics and Composites
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