Effect of Ru and LaNiO3 barrier layers on lead zirconate titanate films grown on nickel-based metal foils by sol–gel process

Lead zirconate titanate [Pb(Zr0.52, Ti0.48)O3 (PZT)] films were grown by sol–gel process on nickel and hastelloy foils. PZT perovskite phase was obtained at 650 °C annealing condition and surface topography showed uniform and dense microstructure. The characterization on dielectric properties indicates that diffusion of foil elements into the PZT and the formation of low capacitance interfacial layer occur during process. In order to reduce the diffusion effect of foil element and/or interfacial layer, barrier layers such as Ru(RuO2) and LaNiO3 layers were utilized on foil substrates. The increase of grain size was observed in PZT films grown on barrier layers. Dielectric properties are greatly improved without degrading ultimate dielectric breakdown strength.